Trichlorosilane
As a key intermediate chemical, TCS (Trichlorosilane) plays a vital role in the production of polysilicon through chemical vapor deposition (CVD), a process that ensures the high purity needed for these industries. By understanding and optimizing TCS-based production, companies can improve the sustainability and competitiveness of their operations, making it a vital component in the growing demand for renewable energy and advanced electronics.
Hydrochlorination Production
This process involves the reaction of silicon metal with hydrogen chloride (HCl) gas, typically at elevated temperatures, to produce TCS.
​
The reaction is as follows: Si + 3HCl → SiHCl₃ + Hâ‚‚ .
In this reaction, silicon metal (Si) is reacted with hydrogen chloride (HCl) to form trichlorosilane (SiHCl₃) and hydrogen gas (Hâ‚‚). The hydrochlorination process is typically carried out in a fluidized bed reactor at temperatures ranging from 300°C to 500°C.
TCS Purification
After TCS (Trichlorosilane) is produced through the hydrochlorination process, it often contains impurities that must be removed to meet the high purity requirements for polysilicon production. The purification of TCS is typically achieved through distillation, which separates TCS from unwanted contaminants based on differences in boiling points